Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction

ABSTRACT

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15&lt;x&lt;−1 and 1&lt;x&lt;15 degrees.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit under 35 U.S.C. Section 119(e) ofco-pending and commonly assigned U.S. Provisional Patent ApplicationSer. No. 61/310,638 filed on Mar. 4, 2010 by Po Shan Hsu, Kathryn M.Kelchner, Robert M. Farrell, Daniel Haeger, Hiroaki Ohta, Anurag Tyagi,Shuji Nakamura, Steven P. DenBaars, and James S. Speck, entitled“SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATESWITH MISCUTS LESS THAN+/−15 DEGREES IN THE C-DIRECTION,” attorney'sdocket number 30794.366 -US-P1 (2010-543-1);

which application is incorporated by reference herein.

This application is related to the following co-pending andcommonly-assigned U.S. patent applications:

U.S. Utility patent application Ser. No. 12/030,117, filed on Feb. 12,2008, by Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, RobertM. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, andShuji Nakamura, entitled “Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR GAN-BASEDLASER DIODES AND LEDS,” attorneys' docket number 30794.222-US-U1(2007-424), which application claims the benefit under 35 U.S.C. Section119(e) of U.S. Provisional Patent Ser. No. 60/889,510, filed on Feb. 12,2007, by Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, RobertM. Farrell, Daniel A. Cohen, James S. Speck, Steven P. DenBaars, andShuji Nakamura, entitled “Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR GAN-BASEDLASER DIODES AND LEDS,” attorneys' docket number 30794.222-US-P1(2007-424-1);

PCT international Patent Application Serial No. US2010/37629, filed onJun. 7, 2010, by Arpan Chakraborty, You-Da Lin, Shuji Nakamura, andSteven P. DenBaars, entitled “ASYMMETRICALLY CLADDED LASER DIODE,”attorneys' docket number 30794.314-US-WO (2009-614-2), which applicationclaims the benefit under 35 U.S.C. Section 119(e) of U.S. ProvisionalApplication Ser. No. 61/184,668, filed Jun. 5, 2009, by ArpanChakraborty, You-Da Lin, Shuji Nakamura, and Steven P. DenBaars,entitled “ASYMMETRICALLY CLADDED LASER DIODE,” attorneys' docket number30794.314-US-P1 (2009-614-1); and

U.S. Utility application Ser. No. 12/795,390, filed on Jun. 7, 2010, byArpan Chakraborty, You-Da Lin, Shuji Nakamura, and Steven P. DenBaars,entitled “LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASERDIODES,” attorneys' docket number 30794.315-US-U1 (2009-616-2), whichapplication claims the benefit under 35 U.S.C. Section 119(e) ofco-pending and commonly assigned U.S. Provisional Application Ser. No.61/184,729, filed on Jun. 5, 2009, by Arpan Chakraborty, You-Da Lin,Shuji Nakamura, and Steven P. DenBaars, entitled “LONG WAVELENGTHm-PLANE (Al,Ga,In)N BASED LASER DIODES,” attorneys' docket number30794.315-US-P1 (2009-616-1);

which applications are incorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to semi-polar optoelectronic devices and methodsof fabrication thereof, and in particular, semi-polar III-nitrideoptoelectronic devices on m-plane substrates with miscuts less than+/−15 degrees in the c-direction.

2. Description of the Related Art

(Note: This application references a number of different publications asindicated throughout the specification by one or more reference numberswithin brackets, e.g., [x]. A list of these different publicationsordered according to these reference numbers can be found below in thesection entitled “References.” Each of these publications isincorporated by reference herein.)

The anticipated high commercial demand for next-generation displaytechnologies, such as miniature mobile projectors and high-definitionfly-spot displays, has significantly accelerated the development ofdirect-emission green laser diodes (LDs). Technical criteria for suchapplications require LDs to have high efficiency, reliability,compactness, and modulation response capabilities [1]. While thewurtzite (Al,Ga,In)N-based material system is largely agreed upon as theleading candidate for green optoelectronic devices, a general consensusbehind which crystal plane is optimal for epitaxial growth has yet to bereached.

Continuous-wave (CW) operation of LDs in the green spectral region hasbeen demonstrated for devices grown on the conventional c-plane of GaN[2-4]. These devices, however, suffer from parasitic internal electricfields that give rise to the quantum-confined stark effect (QCSE) whichdecreases the quantum-well (QW) radiative recombination rate, and causesa blue-shift in emission wavelength with increasing carrier injection[5]. In addition, QCSE becomes more significant for long wavelengthoptoelectronic devices due to the increased lattice mismatch between theIn-rich InGaN QWs and the barrier [2].

To circumvent polarization effects, researchers have demonstratedoperation of LDs grown on the nonpolar m-plane orientation of thewurtzite crystal [6]. While a promising candidate for high power blueLDs, m-plane LDs has so far been limited to 500 nm lasing emission dueto the formation of stacking faults in the active region [7-11].

Various semi-polar (or semipolar) planes, such as (10-11) and (11-22),have been also investigated as alternative growth planes [12-13].Recently, researchers have reported lasing in the green spectral regionfrom high quality InGaN QWs grown on the semi-polar (20-21) plane[14-15]. Further studies have shown that green emitting QWs grown on(20-21) exhibit high compositional homogeneity with localization energyvalues lower than that reported for c-plane [16]. However, quaternaryAlInGaN cladding layers were needed in (20-21) LDs to achieve sufficientmodal confinement without generating strain-induced misfit dislocations(MDs) [17]. While the use of quaternary AlInGaN cladding layers presentsa solution for semi-polar planes with low critical thickness, a simpleAlGaN cladding-free structure with high composition InGaN waveguideswould be much more attractive from a mass-production point of view [7,15, 18].

What is needed are improved methods for optoelectronic device growth.The present invention satisfies this need.

SUMMARY OF THE INVENTION

The present invention discloses a semi-polar (Al,Ga,In)N basedoptoelectronic device grown on a GaN substrate with a miscut x degreesfrom the m-plane in the c-direction (where −15<x<−1 and 1<x<15 degrees).

Such optoelectronic devices, on an m-plane with x degrees of miscuttowards the c-direction (where −15<x<−1 and 1<x<15 degrees), providelower QCSE induced injection-current dependent blue-shift, increasedoscillator strength leading to higher material gain, etc., compared tomiscuts larger or equal to +/−15 degrees towards the c-direction.

Lower miscut away from the m-plane provides for larger criticalthickness of layers grown on the miscut. This may reduce the number ofmisfit defects in the layers grown on the miscut, as compared to layersgrown on semi-polar planes which provide lower critical thickness. Thedefect density in the layers may then be dependent on the semi-polarplane on which the layers are deposited.

For example, the optoelectronic device may comprise one or moresemiconductor III-Nitride layers grown on a semi-polar (or semipolar)plane, or semi-polar crystal plane of GaN, that is a {30-3-1}, {30-31},{40-41}, or {40-4-1} plane, wherein the semi-polar plane or semi-polarcrystal plane of GaN is a top surface of a vicinal, miscut, or off-axisfree standing GaN substrate, for example.

The semi-polar GaN plane may comprise an atomically specific plane, sothat a smooth epitaxial growth is achieved.

The method may include selecting the semi-polar crystal plane in orderto increase a critical thickness of the III-Nitride layers grown on thesemi-polar crystal plane. For example, the III-Nitride layers of theoptoelectronic device may comprise one or more InGaN layers having athickness greater than, or equal to, a Mathews-Blakeslee's criticalthickness, wherein the critical thickness is for an InGaN layerdeposited on a semi-polar crystal plane of GaN oriented 15 degrees ormore from an m-plane of the GaN and in a c-direction of the GaN. TheInGaN layers may have an Indium composition of at least 7%.

The optoelectronic device may be a LD and the one or more InGaN layersmay comprise an InGaN waveguide that provides a modal confinement forthe LD, the LD having a lasing peak at a wavelength of at least 460 nm,for example.

The optoelectronic device may further include a light emitting InGaNactive layer including one or more InGaN quantum wells, one or more ofthe quantum wells having an Indium composition of at least 16% (and athickness greater than 4 nanometers (nm)).

The optoelectronic device may further comprise one or more n-type(Al,In,Ga)N layers; one or more p-type (Al,In,Ga)N layers; and an InGaNactive layer comprising one or more InGaN quantum well layers betweenthe n-type (Al,In,Ga)N layers and the one or more p-type (Al,In,Ga)Nlayers, wherein the n-type (Al,In,Ga)N layers, the p-type (Al,In,Ga)Nlayers, the InGaN quantum well layers have a semi-polar orientation ofthe semi-polar GaN crystal plane, and the InGaN quantum well layers havea peak light emission or a peak light absorption at a wavelength of atleast 477 nm.

The optoelectronic device may be a LD comprising an n-type GaN layer onor above the semi-polar crystal plane; an n-type InGaN waveguiding layeron or above the n-type GaN layer, the n-type InGaN waveguiding layerhaving a thickness of at least 50 nm and an Indium composition of 7% ormore; an InGaN active layer on or above the n-type InGaN waveguidinglayer, including one or more InGaN quantum well layers with an Indiumcomposition of at least 7% and a thickness of more than 4 nm; a p-typeInGaN waveguiding layer on or above the InGaN active layer; and a p-typeGaN layer on or above the p-type InGaN waveguiding layer, the p-typeInGaN waveguiding layer having a thickness of at least 50 nm and anIndium composition of 7% or more, wherein the n-type GaN layer, then-type InGaN waveguiding layer, the InGaN active layer, the p-type GaNlayer, and the p-type InGaN waveguiding layer have a semi-polarorientation of the semi-polar crystal plane.

The semi-polar crystal plane and the depositing conditions may be suchthat one or more of the III-Nitride layers have a surface roughness of0.75 nm or less, for example.

The LD may comprise a waveguide oriented in a c-projection direction ofthe LD, for higher gain.

The device grown on the semi-polar GaN crystal plane includes, but isnot limited to, a LD, light emitting diode (LED), superluminescent diode(SLD), semiconductor amplifier, photonic crystal laser, VCSEL laser,solar cell, or photodetector, for example.

The present invention further discloses a method of fabricating anoptoelectronic device, comprising depositing III-Nitride layersepitaxially on a semi-polar GaN crystal plane oriented x degrees from anm-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and1<x<15 degrees. The method may further comprise selecting the semi-polarcrystal plane in order to increase a critical thickness of theIII-Nitride layers grown on the semi-polar crystal plane.

BRIEF DESCRIPTION OF THE DRAWINGS

Referring now to the drawings in which like reference numbers representcorresponding parts throughout:

FIG. 1( a) is a schematic of the wurtzite GaN crystal structure showingthe {10-10}, {30-31}, {20-21}, and {0001} planes.

FIG. 1( b) is a graph plotting the Matthews-Blakeslee's criticalthickness of a semi-polar InGaN layer on a free standing semi-polar GaNsubstrate, calculated using the Matthews-Blakeslee equation.

FIG. 2 is a flowchart illustrating a method of the present invention.

FIG. 3( a) illustrates a cross-section of a prototype laser devicestructure.

FIG. 3( b) illustrates a cross-section of another embodiment of a devicestructure.

FIG. 3( c) is a cross-sectional schematic of a finished laser devicestructure with etched facets.

FIG. 4( a) shows a Transmission Electron Microscope (TEM) image of thestructure of FIG. 3( a) grown on a (30-31) semi-polar crystal plane.

FIG. 4( b) and FIG. 4( c) show Nomarski images taken at 5× (FIGS. 4( b))and 10× (FIG. 4( c)) showing the morphology of the (30-31) growthsurface.

FIG. 4( d) and FIG. 4( e) are Nomarski images of the top surface of alayer in the structure of FIG. 3( a) grown by MOCVD on a (30-31)semi-polar crystal plane using N₂ ambient (FIG. 4( d)) and H₂ ambient(FIG. 4( e)).

FIG. 4( f) and FIG. 4( g) are Nomarski images of the top surface of alayer in the structure of FIG. 3( a) grown by MOCVD on a (30-3-1)semi-polar crystal plane using N₂ ambient (FIG. 4( f)) and H₂ ambient(FIG. 4( g)).

FIG. 5 is a Reciprocal space map (RSM) around the asymmetrical (20-25)diffraction of the (30-31) LD structure.

FIG. 6( a) shows Light-Current-Voltage (L-I-V) characteristics and FIG.6( b) shows the lasing spectrum, of an etched facet laser diode grown ona {30-3-1} GaN substrate.

FIG. 7( a) shows L-I-V characteristics, and FIG. 7( b) shows a lasingspectrum, of an etched facet 10 μm×1800 μm LD grown on a {30-31} GaNsubstrate, wherein the measurements were taken at 20° C. using 1 μspulses and a duty cycle of 0.1% to ensure minimal device self-heatingeffects, and FIG. 7( b) shows a clear lasing peak at 444.7 nm.

FIG. 7( c) shows electroluminescence (EL) spectra for low currentinjections up to threshold, for the device of FIG. 7( a), wherein ELintensity (arbitrary units, a.u.) increases with increasing currentinjection (milliamps, mA).

FIG. 7( d) shows peak wavelength and full width at half maximum (FHWM)dependence on current density, wherein peak wavelength data for a 450 nmc-plane LD is included for comparison [22], for the device of FIG. 7(a).

FIG. 7( e) shows dependence of threshold current density and lasingwavelength on stage temperature, for the device of FIG. 7( a).

DETAILED DESCRIPTION OF THE INVENTION

In the following description of the preferred embodiment, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown by way of illustration a specific embodiment in which theinvention may be practiced. It is to be understood that otherembodiments may be utilized and structural changes may be made withoutdeparting from the scope of the present invention.

Overview

(Al,Ga,In)N optoelectronic devices are grown on polar {0001}, non-polar{11-20} and {10-10}, and semi-polar {10-1-1}, {11-22} and {20-21} GaNcrystal planes.

Lasers grown on polar and semi-polar planes suffer from polarizationrelated electric fields in the quantum-wells that degrade deviceperformance.

While non-polar {10-10} and {11-20} devices are free from polarizationrelated effects, incorporation of high indium concentrations in {10-10}and high quality crystal growth of {11-20} devices have been shown to bedifficult to achieve.

For example, sufficiently long wavelength emitting optoelectronicdevices on m-plane are difficult to achieve due to generation of defectsat high indium compositions. Semi-polar planes, such as {20-21}, showbetter performance at long wavelength since semi-polar planes arebelieved to incorporate indium more easily. However, semi-polar planeswith miscut larger or equal to +/−15 degrees have low criticalthicknesses thus making growth of sufficient waveguide structures forlasers very difficult. Sumitomo's green laser on {20-21} [14] useslattice matched AlInGaN cladding layers which are very difficult togrow.

Nomenclature

GaN and its ternary and quaternary compounds incorporating aluminum andindium (AlGaN, InGaN, AlInGaN) are commonly referred to using the terms(Al,Ga,In)N, III-nitride, Group III-nitride, nitride,Al_((1-x-y))In_(y)Ga_(x)N where 0<x<1 and 0<y<1, or AlInGaN, as usedherein. All these terms are intended to be equivalent and broadlyconstrued to include respective nitrides of the single species, Al, Ga,and In, as well as binary, ternary and quaternary compositions of suchGroup III metal species. Accordingly, these terms comprehend thecompounds AlN, GaN, and InN, as well as the ternary compounds AlGaN,GaInN, and AlInN, and the quaternary compound AlGaInN, as speciesincluded in such nomenclature. When two or more of the (Ga, Al, In)component species are present, all possible compositions, includingstoichiometric proportions as well as “off-stoichiometric” proportions(with respect to the relative mole fractions present of each of the (Ga,Al, In) component species that are present in the composition), can beemployed within the broad scope of the invention. Accordingly, it willbe appreciated that the discussion of the invention hereinafter inprimary reference to GaN materials is applicable to the formation ofvarious other (Al, Ga, In)N material species. Further, (Al,Ga,In)Nmaterials within the scope of the invention may further include minorquantities of dopants and/or other impurity or inclusional materials.Boron (B) may also be included.

The term “Al_(x)Ga_(1-x)N-cladding-free” refers to the absence ofwaveguide cladding layers containing any mole fraction of Al, such asAl_(x)Ga_(1-x)N/GaN superlattices, bulk Al_(x)Ga_(1-x)N, or AlN. Otherlayers not used for optical guiding may contain some quantity of Al(e.g., less than 10% Al content). For example, an Al_(x)Ga_(1-x)Nelectron blocking layer may be present.

One approach to eliminating the spontaneous and piezoelectricpolarization effects in GaN or III-nitride based optoelectronic devicesis to grow the III-nitride devices on nonpolar planes of the crystal.Such planes contain equal numbers of Ga (or group III atoms) and N atomsand are charge-neutral. Furthermore, subsequent nonpolar layers areequivalent to one another so the bulk crystal will not be polarizedalong the growth direction. Two such families of symmetry-equivalentnonpolar planes in GaN are the {11-20} family, known collectively asa-planes, and the {1-100} family, known collectively as m-planes. Thus,nonpolar III-nitride is grown along a direction perpendicular to the(0001) c-axis of the III-nitride crystal.

Another approach to reducing polarization effects in (Ga,Al,In,B)Ndevices is to grow the devices on semi-polar planes of the crystal. Theterm “semi-polar plane” (also referred to as “semipolar plane”) can beused to refer to any plane that cannot be classified as c-plane,a-plane, or m-plane. In crystallographic terms, a semi-polar plane mayinclude any plane that has at least two nonzero h, i, or k Millerindices and a nonzero 1 Miller index.

Technical Description

The design of LD structure on semi-polar GaN crystal planes is uniquedue to the possibility of forming stress-relieving Misfit Dislocations(MDs) at the hetero-interface(s) via glide of pre-existing threadingdislocations (TDs) on the basal (0001) plane [19]. The driving force forsuch TD glide originates from the resolved shear stress on the basalplane—the magnitude of which decreases with increasing inclination angleof the semi-polar plane away from the basal (0001) plane [20].Therefore, hetero-epitaxial growth of strained (Al,Ga,In)N layers onsemi-polar planes with an inclination angle between 80 and 90 degrees(with respect to the c-plane) should lead to a dramatic reduction in theresolved shear stress on the basal plane and a concomitant increase inepilayer critical thickness.

As shown in FIG. 1( a), the {30-31} GaN semi-polar plane is inclined 5and 10 degrees away in the c-direction from the semi-polar GaN {20-21}plane and nonpolar GaN {10-10} m-plane, respectively. Also shown in FIG.1( a) are the {0001} plane, the GaN [10-10] direction, the GaN [0001]direction, the GaN [11-20] direction, the Ga atoms and the N atoms.Matthews-Blakeslee equilibrium critical thickness h_(c) [21] values(calculated under the assumption of isotropic elasticity) forIn_(0.06)Ga_(0.94)N epitaxially grown on the (11-22), (20-21), and(30-31) GaN semi-polar planes are 17, 46 and 74 nm, respectively, asshown in FIG. 1( b). The larger critical thickness on (30-31) frees upconsiderable epilayer LD waveguide design space in comparison to otherpreviously investigated semi-polar planes. The critical thickness h_(c)in FIG. 1( b), for a semi-polar (SP) InGaN layer on a semi-polar (SP)free standing GaN substrate was calculated using the Matthew'sBlakeslee's Equation for h_(c) [21]:

$h_{c} = {\frac{b}{8{\pi cos\lambda}}\left( \frac{1 - {v\; \cos^{2}\beta}}{1 + v} \right){\ln \left( \frac{R}{r_{0}} \right)}}$

where b is the Burgers vector, ν is Poisson's ratio, λ is the anglebetween the Burger's vector and the direction that is both normal to thedislocation line and that lies within the plane of the interface, β isthe angle between the Burger's vector and the dislocation line, and r₀and R are the inner and outer radii of the cylindrical ring surroundinga straight dislocation core, respectively.

The present invention discloses semi-polar III-nitride optoelectronicdevices on m-plane substrates with miscuts less than +/−15 degrees inthe c-direction. For example, the invention demonstrates the possibilityof superior laser performance by growing laser structures on m-planesubstrates miscut x degrees in the c-direction (where −15<x<−1 and1<x<15 degrees).

Process Steps

FIG. 2 illustrates a method of fabricating a device. The method maycomprise the following steps.

Block 200 represents providing a semi-polar GaN crystal plane orientedor miscut x degrees from an m-plane of the GaN, and in a c-direction ofthe GaN, where −15<x<−1 and 1<x<15 degrees. The GaN crystal plane may beon a GaN substrate (e.g., free standing substrate). The semi-polar GaNcrystal plane may be provided by miscutting, cutting, or sawing the GaNsubstrate, or otherwise obtaining a miscut or vicinal GaN substrate sothat miscut or vicinal surface may include the semi-polar GaN crystalplane. Low-defect density free-standing GaN substrates provided byMitsubishi Chemical Corporation may be used, for example. The step mayfurther comprise selecting the semi-polar crystal plane in order toincrease a critical thickness of the III-Nitride layers grown on thesemi-polar crystal plane.

Block 202 represents depositing or growing (e.g., epitaxially) a device,such as an optoelectronic device comprising one or more III-Nitridelayers, on the semi-polar GaN crystal plane, on the miscut of GaN or ofthe GaN substrate, or on the vicinal surface of GaN or of the GaNsubstrate (wherein the miscut or vicinal surface includes the semi-polarGaN crystal plane). The semi-polar GaN crystal plane may be miscut ororiented x degrees from an m-plane of the GaN and in a c-direction,where −15<x<−1 and 1<x<15 degrees.

The optoelectronic device may comprise one or more III-Nitride or(Al,In,Ga)N (e.g., InGaN) layers having a thickness greater than, orequal to, a Mathews-Blakeslee's critical thickness, wherein the criticalthickness is for InGaN layer(s) (having the same Indium composition)deposited on a semi-polar crystal plane of GaN oriented 15 degrees ormore from an m-plane of the GaN and in a c-direction of the GaN. The(Al,In,Ga)N layers or InGaN layers may have an Indium composition of atleast 7%. The (Al,In,Ga)N layers may comprise an entire epilayerthickness of the optoelectronic device. The InGaN layers may comprisewaveguiding layers, an active layer, or both. The InGaN active layersmay comprise one or more light emitting or absorbing quantum well layers(e.g., multi quantum well layers), wherein a total thickness of theactive layer (e.g., total thickness of the multi quantum wells) has thethickness greater than the critical thickness for a semi-polar planeoriented 15 degrees or more from an m-plane of GaN in a c-direction.

The optoelectronic device may comprise a LD and the one or more InGaNlayers may comprise an InGaN waveguide that provides a modal confinementfor the LD, the LD having a lasing peak at a wavelength of at least 445nm, at least 460 nm, or at least 478 nm, for example.

The III-Nitride layers may further include a light emitting InGaN activelayer including one or more InGaN quantum wells, one or more of thequantum wells having an Indium composition of at least 7%, at least 10%,or at least 16%, and a thickness greater than 4 nanometers (e.g., 5 nm),at least 5 nm, or at least 8 nm, for example. However, the quantum wellthickness may also be less than 4 nm, although it is typically above 2nm thickness.

The depositing of the III-Nitride layers may further comprise depositingone or more n-type (Al,In,Ga)N layers on the semi-polar GaN crystalplane, depositing an InGaN active layer comprising the one or more InGaNquantum well layers (between barrier layers) on or above the one or moren-type (Al,In,Ga)N layers, and depositing one or more p-type (Al,In,Ga)Nlayers on the InGaN quantum well layers, wherein the III-Nitride layers(e.g., n-type (Al,In,Ga)N layers, the p-type (Al,In,Ga)N layers, and theInGaN quantum well layers) have a semi-polar orientation of thesemi-polar GaN crystal plane, and the InGaN quantum well layers have apeak light emission or a peak light absorption at a wavelength of atleast 477 nm. However, the layers may be deposited in the oppositeorder, such that the p-type layers are on the semipolar crystal planeand below the active layer, and the n-type layers are above the activelayer.

The optoelectronic device may be a LD fabricated by depositing an n-typeGaN layer on or above the semi-polar GaN crystal plane; depositing ann-type InGaN waveguiding layer on or above the n-type GaN layer, then-type InGaN waveguiding layer having a thickness of at least 50 nm andan Indium composition of 7% or more; depositing an InGaN active layer onor above the n-type InGaN waveguiding layer, the active layer includingbarrier layers and one or more InGaN quantum well layers with an Indiumcomposition of at least 7% and a thickness of more than 4 nm (the InGaNquantum well layers between the barrier layers); depositing a p-typeInGaN waveguiding layer on or above the InGaN quantum wells; anddepositing a p-type GaN layer on or above the p-type InGaN waveguidinglayer, the p-type InGaN waveguiding layer having a thickness of at least50 nm and an Indium composition of 7% or more, wherein the III-Nitridelayers (e.g., n-type GaN layer, the n-type InGaN waveguiding layer, theInGaN active layer , the p-type GaN layer, and the p-type InGaNwaveguiding layer) have a semi-polar orientation of the semi-polarcrystal plane.

In one embodiment, the LD may be AlGaN cladding layer free, in otherwords, the laser diode may not contain any AlGaN cladding layers, orwherein any AlGaN layers in the device do not confine the optical modeof the device (e.g., the AlGaN layers in the device may have an Alcontent less than or equal to 10%).

FIG. 3( a) illustrates a prototype laser device structure 300 that wasepitaxially grown on a {30-31} GaN substrate 302 (where x=10 degrees) ora {30-3-1} GaN substrate 302 (where x=−10 degrees) using metal organicchemical vapor deposition (MOCVD), e.g., atmospheric pressure MOCVD(AP-MOCVD). The device structure 300 is grown on a top surface 304 ofthe GaN substrate 302, wherein the top surface 304 is oriented x degreeswith respect to the m-plane 306 of the GaN substrate 300. For example,the surface 304 may be a {30-31} plane or {30-3-1} plane. The device 300is AlGaN cladding-free and the MOCVD growth conditions employed forgrowing the (30-31) the LD structure were similar to that typically usedfor c-plane, m-plane, and (20-21) growths.

The structure 300 comprises a thick lower GaN cladding layer 308 (e.g.,n-type GaN layer on or above the semi-polar GaN crystal plane 304), aSi-doped InGaN waveguiding layer 310 (e.g., 50 nm thick n-type InGaNwaveguiding layer 310 on or above the n-type GaN layer 308), an activelayer on or above the n-type InGaN waveguiding layer 310, the activelayer including three periods of an undoped InGaN quantum well (e.g., 5nm thick) 312 sandwiched between GaN barriers 314 a, 314 b (e.g., 10 nmthick), an AlGaN electron blocking layer (EBL) 316, an Mg-doped InGaNupper waveguiding layer 318 (e.g., 50 nm thick p-type InGaN waveguidinglayer on or above the quantum wells 312), an Mg-doped upper GaN claddinglayer 320 (e.g., p-type GaN layer), and an Mg-doped GaN p⁺⁺ contactlayer 322 [7]. The n-type GaN 308, n-type InGaN 310, active region 312,314 a, 314 b, and p-type InGaN 318, were grown under N₂ ambient. Thep-type GaN 320 was grown under H₂ ambient. The entire device was grownunder high V/III ratio (>150). The structure and growth conditions aresimilar to those described in [7].

In one or more examples, the semi-polar crystal plane 304 and thedepositing conditions may be such that one or more of the III-Nitridelayers 308-322 have a surface roughness of 0.75 nm or less.

FIG. 3( b) illustrates another embodiment of a device structure 324,grown during Block 202 on a semi-polar plane 304 of Block 200, whereinthe device structure comprises one or more III-nitride or (Al,Ga,In)Nactive layers 326 (e.g., one or more InGaN quantum wells) between one ormore n-type III-nitride or (Al,Ga,In)N layers 328 and one or more p-typeIII-nitride or (Al,Ga,In)N layers 330. For example, the n-typeIII-Nitride layers 328 may be on or above the semi-polar GaN crystalplane 304, the III-Nitride active layer 326 may be on or above then-type III-Nitride layers 328, and the p-type III-Nitride layers 330 maybe on or above the III-Nitride active layers 326. In one embodiment, theposition of the n-type 328 and p-type 330 layers may be reversed. Alsoshown in FIG. 3( a) and FIG. 3( b) is the c-direction of the GaNsubstrate 302.

The semi-polar crystal plane 304 may be a {30-31}, {30-3-1}, {40-41}, or{40-4-1} plane, for example. The semi-polar GaN crystal plane 304provided in Block 200 may be a top surface of a vicinal, miscut, oroff-axis free standing GaN substrate 302, for example, and thesemi-polar GaN plane 304 may comprise an atomically specific plane, sothat a smooth epitaxial growth of the III-Nitride layers (e.g., 308-322,326, 328, 330) is achieved. For example, one or more of the III-Nitridelayers 308-322, 326, 328, 330 may have a surface roughness of 0.75 nm orless. The present invention is not limited to a particular thickness ofthe III-Nitride layers. The III-Nitride layers are not limited to aparticular type of device layer, the III-Nitride active layers 326 arenot limited to quantum wells or a particular type of active layer. Forexample, the III-Nitride layers of the optoelectronic device may bedevice layers for a solar cell, photodetector, etc., and the activelayers 326 may be active layers for a solar cell, photodetector, etc.

Block 204 represents processing the device (e.g., including formingmirror facets). Ridge-waveguide laser structures are fabricated usingconventional photolithography, dry-etching, and lift-off techniques. Forexample, in one embodiment, the laser device structure of Block 202 wasprocessed into a 10 μm by 1800 μm ridge waveguide LD using conventionalphotolithographic and dry etching techniques. A self-aligned dry etchand lift-off process was used to define the ridge waveguide and oxideinsulator, and followed by 50/1000 nm Pd/Au metallization for thep-contact. Mirror facets were formed orthogonal to the in-planeprojection of the c-axis by standard Cl₂ based reactive ion etching.Backside Al/Au n-contacts were deposited directly onto the bulksubstrate.

Block 206 represents the end result of the method, a device oroptoelectronic device such as a laser diode or LED, grown on asemi-polar plane 304 or a semi-polar GaN crystal plane 304 (e.g., on amiscut GaN substrate 302), wherein the semi-polar plane 304 or semipolarGaN crystal plane 304 is miscut or oriented x degrees from an m-plane306 of the GaN and in a c-direction of the GaN, where −15<x<−1 and1<x<15 degrees. For example, an optoelectronic device may be grown on amiscut of GaN, wherein the miscut includes the semi-polar GaN crystalplane 304 miscut x degrees from an m-plane 306 of the GaN and in ac-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.

FIG. 3( c) is a cross-sectional schematic of a finished laser devicestructure 332 of Block 206 with etched facets 334 (e.g., etched facetmirrors), ridge insulator 336, and p-contact pad 338. The LD may be on{30-31}, for example. The optoelectronic device may be an AlGaN claddinglayer free LD comprising an InGaN waveguide that is thick enough toprovide modal confinement.

Experimental Results

Morphological and Structural Qualities

The morphological and structural qualities of the LD structure werecharacterized by repeating the identical growth conditions on separate(30-31) GaN substrates. Inconsistencies between separate MOCVD growthswere shown to be minimal via photoluminescence measurements.

FIG. 4( a) shows a TEM image of the structure of FIG. 3( a) grown on a(30-31) semipolar crystal plane 304, showing high quality interfaceswith no apparent defects. FIG. 4( a) shows n-type GaN layer 308 (n-GaN),n-type InGaN layer 310 (n-InGaN), InGaN quantum wells 312 with GaNbarriers 314 a, 314 b (InGaN/GaN), p-type AlGaN EBL (p-AlGaN), p-typeInGaN layer 318 (p-InGaN), and p-type layer 320 (p-GaN).

FIG. 4( b) and FIG. 4( c) show Nomarski images of the (30-31) topsurface 340 (opposite or parallel to surface 304) of n-type GaN layer308 in the device structure of FIG. 3( a), with obvious striationsrunning along the [11-22] direction, which the present inventionattributes to unoptimized growth conditions.

FIG. 4( d)-FIG. 4(g) show how surface morphology may be optimized bygrowth conditions. FIG. 4( d) and FIG. 4( e) are Nomarski images of thetop surface 340 of n-type GaN layer 308 in the device structure of FIG.3( a), grown by MOCVD on a (30-31) semipolar crystal plane 304 using N₂ambient (FIG. 4( d)) and H₂ ambient (FIG. 4( e)).

FIG. 4( f) and FIG. 4( g) are Nomarski images of the top surface 340 ofn-type GaN layer 308 in FIG. 3( a) grown by MOCVD on a (30-3-1)semipolar crystal plane 304 using N₂ ambient (FIG. 4( f)) and H₂ ambient(FIG. 4( g)).

The 50 nm thick InGaN layer (e.g., layer 310) on the (30-3-1) plane 304,has a top (30-3-1) plane surface 342, wherein the top surface 342 has aroot mean square (RMS) roughness of 0.75 nm. However, the RMS roughnessmay be higher or lower. The 50 nm thick InGaN layer 310 was grown underN₂ ambient on the GaN 308 and the GaN 308 was grown under N₂ ambient athigh temperature (e.g., approximately 900° C.).

FIG. 5 shows the x-ray reciprocal space mapping (RSM) of the LDstructure 300 of FIG. 3( a) around the asymmetrical (20-25) diffractionof the (30-31) plane. As seen in the RSM, the Bragg peaks for all layersin the LD structure line up vertically on the Q_(x) axis, suggestingthat the LD structure is coherently strained.

Output Characteristics

All electrical and luminescence measurements were made on devices withuncoated mirror facets.

FIG. 6( a) shows L-I-V characteristics, and FIG. 6( b) shows a lasingspectrum, of an etched facet LD having the structure of FIG. 3( a) grownon a {30-3-1} GaN substrate (and processed according to FIG. 2), showingan FWHM of 0.4 nm and a lasing peak at 477.5 nm.

FIGS. 7( a)-7(e) are measurements of the etched facet AlGaNcladding-free InGaN/GaN LD of FIG. 3( a) grown on a semipolar (30-31)GaN substrate and processed according to the steps of FIG. 2.

FIG. 7( a) shows L-I-V characteristics, and FIG. 7( b) shows the lasingspectrum of the etched facet AlGaN cladding-free InGaN/GaN LD. Allmeasurements were taken at 20° C. using 1 μs pulses and a duty cycle of0.1% to ensure minimal device self-heating effects. The lasing spectrumin FIG. 7( b) shows a clear lasing peak at 444.7 nm. The estimatedthreshold current (I_(th)) was 1022 mA, which corresponds to a J_(th) of5.6 kA/cm². The present invention attributes the relatively highthreshold voltage of 9.9 V to unoptimized p-contacts and dopingprofiles.

FIG. 7( c) shows a series of EL spectra measured as a function ofcurrent.

FIG. 7( d) shows the peak EL wavelength shifted from approximately 448nm at 0.03 kA/cm² to 444 nm just above threshold at 6.0 kA/cm². Thisvalue of the EL blue-shift is comparable to m-plane LDs and considerablylower than c-plane LDs emitting at a similar wavelength (c-plane data isshown for comparison) [22, 8]. FIG. 7( d) also shows the dependence ofspectral width, or laser peak FWHM, on current density, which narrowedfrom 16.3 nm at 0.03 kA/cm² to 2.5 nm just above threshold.

FIG. 7( e) shows J_(th) and peak wavelength (at an output power of ˜35mW) as a function of stage temperature. A characteristic temperature(T_(o)) value of ˜135 K was estimated by plotting the natural log ofthreshold current with respect to temperature and calculating theinverse of the slope. This value compares well to those reported forc-plane devices emitting at the same wavelength range [23-24]. Thedependence of the peak wavelength on temperature was calculated to be˜0.06 nm/K, which also corresponds well to values reported for LDs grownon m-plane, c-plane, and the (20-21) plane [9, 2, 25, 15].

The present invention estimates a confinement factor of ˜4.9% for the LDstructure of FIG. 3( a). However, a lasing with a lower confinementfactor may be possible, and the LD structure of FIG. 3( a) may also havea higher confinement factor.

The present invention enables improved laser performance. This initialLD performance coupled with high theoretical critical thickness, and lowquantum confined stark effect (QCSE), suggests that semipolar (30-31)plane has great potential for long wavelength LD applications. Highercritical thickness of strained (Al, Ga, In)N alloy layers epitaxiallygrown on semi-polar GaN substrates enable the present invention toimprove modal confinement for coherent laser diode waveguide layers.Thicker quantum-wells help reduce effective carrier density inquantum-wells (reducing Auger-type losses) and can facilitate lowtransparency carrier density.

Possible Modifications

Variations include various possible epitaxial growth techniques, laserdevice structures, different dry-etching techniques, includingInductively Coupled Plasma (ICP), Reactive Ion Etching (RIE), FocusedIon Beam (FIB), CMP, Chemically Assisted Ion Beam Etching (CAIBE),formation of facet mirrors by cleaving, formation of facet mirrors bylaser ablation, variations in waveguide structures, facets made by twotypes of etching techniques or different angles (superluminescent diodes(SLDs)), and facets mirrors coated with the same/two different types ofdielectrics, etc.

For example:

-   -   Miscuts include, but are not limited to, {30-31}, {30-3-1},        {40-41}, and {40-4-1} planes, etc. Numerous semi-polar planes        with other miller indices are possible. (30-31), (30-3-1),        (40-41), and (40-4-1) are just listed as examples. Using        atomically specific planes, smooth epitaxial growth is possible.    -   LD devices on such miscuts may have etched facet mirrors, or        laser ablated facet mirrors whenever cleaved facet mirrors are        not possible.    -   LD devices on such miscuts may have cleaved facet mirrors with        tilted facets (e.g. facets tilted with respect to a growth plane        304 of the LD), or facets perpendicular to the growth plane 304.        For example, the above described {30-31} laser may have cleaved        facets.    -   LD devices on such miscuts may have waveguides oriented in the        c-projection direction for higher gain.    -   LD devices on such miscuts may employ optical feedback from        cavity mirrors and/or facets and/or a Distributed Bragg        Reflector (DBR) and/or gratings, etc.    -   LD devices on such miscuts may employ optical gain (e.g., SLD or        semiconductor optical amplifiers).    -   LD devices on such miscuts may employ different waveguide        structures.    -   LD devices on such miscuts may have one or two angled facets or        rough facets (formed by wet chemical etching) to suppress        feedback (SLD).    -   LD devices on such miscuts may have passive cavities or        saturable absorbers.    -   Devices may include Continuous Wave operated lasers, and devices        with increased lasing and spontaneous wavelength.

Devices may be grown on other III-nitride substrates other than GaN. Thesemi-polar crystal plane 304 may be a semi-polar GaN crystal plane or asemi-polar III-Nitride crystal plane. Alternatively, the semi-polarcrystal plane may be a semi-polar plane 304 of GaN (e.g., GaN substrate)or of a III-Nitride (e.g., III-Nitride substrate). The semi-polar plane304 may then be oriented or miscut x degrees from an m-plane of theIII-Nitride and in a c-direction of the III-Nitride, where −15<x<−1 and1<x<15 degrees. The semi-polar plane 304 may be planar. One or more ofthe III-Nitride layers 308-322 may be planar layers. For example, one ormore of the III-Nitride layers 308-322, 326, 328, 330 may have a topsurface (e.g. 340, 342) that is planar. One or more of the III-Nitridelayers 308-322, 326, 328, 330 may have interfaces (with otherIII-Nitride layers) that are planar.

-   -   Devices may be grown using growth methods other than MOCVD,        including, but not limited to, molecular beam epitaxy (MBE) and        hydride vapor phase epitaxy (HYPE), for example.

Variations also include other optoelectronic devices (LEDs, photoniccrystal lasers, solar cells, photodetectors, etc.) grown on m-planesubstrates miscut x degrees in the c-direction (where −15<x<−1 and1<x<15 degrees). For example, devices on such miscuts may include laserdiodes, SLDs, semiconductor amplifiers, and VCSEL lasers.

Advantages and Improvements

Existing (Al,Ga,In)N lasers are typically grown on polar {0001},non-polar {10-10} and {11-20}, or semi-polar {11-22} and {20-21} planes.Lasers grown on polar and semi-polar planes suffer from polarizationrelated electric fields in the quantum-wells that degrade deviceperformance. While non-polar {10-10} and {11-20} devices are free frompolarization related effects, incorporation of high indiumconcentrations in {10-10}, and high quality crystal growth of {11-20}devices have been shown to be difficult.

Devices grown on semi-polar planes, with miscuts x degrees from them-plane in the c-direction (where −15<x<−1 and 1<x<15 degrees), haveminimal polarization related electric fields in the quantum-wells ascompared to conventional semi-polar planes (i.e., {11-22}, {20-21},etc.). The critical thickness of strained epitaxial (Al, Ga, In)N alloylayers on such GaN miscut m-plane substrates may also be larger thanother semi-polar (i.e., {11-22}, {10-1-1}, and {20-21}) crystal planeswith miscuts larger than +/−15 degrees from the m-plane in thec-direction. This enables higher thickness and composition for waveguidelayers—thus improving modal gain. The present invention's workingprototype laser devices on the {30-31} and {30-3-1} plane demonstratesthe potential of devices on such m-plane miscut substrates.

Applications for the devices of the present invention include, but arenot limited to, optoelectronic devices (lasers, LEDs, etc) for display,lighting, biomedical imaging, illumination applications, etc.

REFERENCES

The following references are incorporated by reference herein.

[1] U. Steegmueller et al.: Proc. of SPIE 7198, 719807 (2009)

[2] D. Queren et al.: Appl. Phys. Lett. 94 (2009) 081119.

[3] A. Avramescu et al.: Appl. Phys. Lett. 95 (2009) 071103.

[4] T. Miyoshi et al.: Appl. Phys. Express 2 (2009) 062201.

[5] J. S. Speck and S. F. Chichibu: MRS Bull. 34 (2009) No. 5, 304.

[6] M. Schmidt et al.: Jpn. J. Appl. Phys. 46 (2007) L190.

[7] K. Kelchner et al.: Appl. Phys. Express 2 (2009) 071003.

[8] M. Kubota et al.: Appl. Phys. Express 1 (2008) 011102.

[9] K. Okamoto et al.: Appl. Phys. Lett. 94 (2009) 071105.

[10] Y. Lin et al.: appl. Phys. Express 2 (2009) 082102.

[11] A. M. Fischer et al.: Appl. Phys. Express 2 (2009) 041002.

[12] A. Tyagi et al.: Jpn. J. Appl. Phys. 46 (2007) L444.

[13] H. Asamizu et al.: Appl. Phys. Express 1 (2008) 091102.

[14] Y. Enya et al.: Appl. Phys. Express 2 (2009) 082101.

[15] A. Tygai et al.: Appl. Phys. Express 3 (2010) 011002.

[16] M. Funato et al.: Appl. Phys. Express. 3 (2010) 021002.

[17] Y. Yoshizumi et al.: Appl. Phys. Express 2 (2009) 092101.

[18] D. Feezell et al.: Jpn. J. Appl. Phys. 46 (2007) L284.

[19] A. Tyagi et al.: Appl. Phys. Lett. 97 (2009) 251905.

[20] E. Young et al.: Appl. Phys. Express 3 (2010) 011004.

[21] J. W. Matthews and A. E. Blakeslee: J. Cryst. Growth 27 (1974) 118.

[22] J. Muller et al.: Appl. Phys. Lett. 95 (2009) 051104.

[23] H. Y. Ryu et al.: Photonics Tech. Lett. 19 (2007) 1717.

[24] T. Kozaki et al.: Proc. of SPIE, 6133 (2006) 613306-1.

[25] S. Bruninghoff et al.: Proc. SPIE 7216 (2009) 72161C.

[26] Anurag Tyagi et al., Applied Physics Letters, 95, 251905 (2009).

[27] Po Shan Hsu, Kathryn M. Kelchner, Anurag Tyagi, Robert M. Farrell,Daniel A. Haeger, Kenji Fujito, Hiroaki Ohta, Steven P. DenBaars, JamesS. Speck, and Shuji Nakamura, entitled “InGaN/GaN Blue Laser Diode Grownon Semipolar (30-31) Free-Standing GaN Substrates,” Applied PhysicsExpress 3 (2010) 052702.

[28] Powerpoint slides by Po Shan Hsu, entitled ““InGaN/GaN Laser DiodesGrown on (30-31) and (30-3-1) Free Standing GaN substrates” Solid StateLighting and Energy Center Annual Review, University of California,Santa Barbara, Nov. 5, 2010.

CONCLUSION

This concludes the description of the preferred embodiment of thepresent invention. The foregoing description of one or more embodimentsof the invention has been presented for the purposes of illustration anddescription. It is not intended to be exhaustive or to limit theinvention to the precise form disclosed. Many modifications andvariations are possible in light of the above teaching. It is intendedthat the scope of the invention be limited not by this detaileddescription, but rather by the claims appended hereto.

1. An optoelectronic device, comprising: one or more III-Nitride layersepitaxially grown on a semi-polar crystal plane of GaN, wherein thesemi-polar crystal plane is oriented x degrees from an m-plane of theGaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.2. The device of claim 1, wherein the semi-polar crystal plane is a{30-31}, {30-3-1}, {40-41}, or {40-4-1} plane.
 3. The device of claim 1,wherein the semi-polar crystal plane is a top surface of a vicinal,miscut, or off-axis free standing GaN substrate.
 4. The device of claim1, wherein the III-Nitride layers comprise one or more InGaN layershaving a thickness greater than, or equal to, a Mathews-Blakeslee'scritical thickness, wherein the critical thickness is for an InGaN layerdeposited on a semi-polar crystal plane of GaN oriented 15 degrees ormore from an m-plane of the GaN and in a c-direction of the GaN.
 5. Thedevice of claim 4, wherein the optoelectronic device is a laser diodeand the one or more InGaN layers comprise an InGaN waveguide thatprovides a modal confinement for the laser diode.
 6. The device of claim5, wherein the III-Nitride layers further include a light emitting InGaNactive layer including one or more InGaN quantum wells, one or more ofthe quantum wells having an Indium composition of at least 16% and athickness greater than 4 nanometers.
 7. The device of claim 4, whereinthe InGaN layers have an Indium composition of at least 7%.
 8. Thedevice of claim 1, wherein the optoelectronic device is grown on amiscut or vicinal surface of a GaN substrate, the miscut or vicinalsurface including the semi-polar crystal plane, and the III-Nitridelayers further comprising: one or more n-type (Al,In,Ga)N layers; one ormore p-type (Al,In,Ga)N layers; and an InGaN active layer comprising oneor more InGaN quantum well layers between the n-type (Al,In,Ga)N layersand the one or more p-type (Al,In,Ga)N layers, wherein the n-type(Al,In,Ga)N layers, the p-type (Al,In,Ga)N layers, and the InGaN quantumwell layers have a semi-polar orientation of the semi-polar crystalplane and the InGaN quantum well layers have a peak light emission or apeak light absorption at a wavelength of at least 477 nm.
 9. The deviceof claim 1, wherein the optoelectronic device is a laser diode and theIII-Nitride layers comprise: an n-type GaN layer on or above thesemipolar crystal plane; an n-type InGaN waveguiding layer on or abovethe n-type GaN layer, the n-type InGaN waveguiding layer having athickness of at least 50 nm and an Indium composition of 7% or more; anInGaN active layer on or above the n-type InGaN waveguiding layer,including one or more InGaN quantum well layers with an Indiumcomposition of at least 7% and a thickness of more than 4 nm; a p-typeInGaN waveguiding layer on or above the InGaN active layer; and a p-typeGaN layer on or above the p-type InGaN waveguiding layer, the p-typeInGaN waveguiding layer having a thickness of at least 50 nm and anIndium composition of 7% or more, wherein the III-Nitride layers have asemipolar orientation of the semipolar crystal plane.
 10. The device ofclaim 1, wherein the semi-polar crystal plane comprises an atomicallyspecific plane, so that a smooth epitaxial growth of the III-Nitridelayers is achieved.
 11. The device of claim 1, wherein the device grownon the semi-polar crystal plane includes a laser diode, light emittingdiode, superluminescent diode, semiconductor amplifier, photonic crystallaser, VCSEL laser, solar cell, or photodetector.
 12. The device ofclaim 1, wherein the device is a laser diode grown on the semi-polarcrystal plane, the laser diode comprising a waveguide oriented in ac-projection direction of the laser diode, for higher gain.
 13. Thedevice of claim 1, wherein one or more of the III-Nitride layers have asurface roughness of 0.75 nm or less.
 14. A method of fabricating anoptoelectronic device, comprising: depositing III-Nitride layersepitaxially on a semi-polar crystal plane, wherein the semi-polarcrystal plane is oriented x degrees from an m-plane of the GaN and in ac-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.
 15. Themethod of claim 14, wherein the semi-polar crystal plane is a {30-31},{30-3-1}, {40-41}, or {40-4-1} plane.
 16. The method of claim 14,wherein the semi-polar crystal plane is a top surface of a vicinal,miscut, or off-axis free standing GaN substrate.
 17. The method of claim14, wherein the depositing of the III-Nitride layers comprisesdepositing one or more InGaN layers having a thickness greater than, orequal to, a Mathews-Blakeslee's critical thickness, wherein the criticalthickness is for an InGaN layer deposited on a semi-polar crystal planeof GaN oriented 15 degrees or more from an m-plane of the GaN and in ac-direction of the GaN.
 18. The method of claim 17, wherein theoptoelectronic device is a laser diode and the one or more InGaN layerscomprise an InGaN waveguide that provides a modal confinement for thelaser diode, the laser diode having a lasing peak at a wavelength of atleast 460 nm.
 19. The device of claim 18, wherein the depositing of theIII-Nitride layers further includes depositing a light emitting InGaNactive layer including one or more InGaN quantum wells, one or more ofthe quantum wells having an Indium composition of at least 16% and athickness greater than 4 nanometers.
 20. The device of claim 18, whereinthe InGaN layers have an Indium composition of at least 7%.
 21. Themethod of claim 14, wherein: the optoelectronic device is deposited on amiscut or vicinal surface of a GaN substrate, the miscut or vicinalsurface including the semi-polar GaN crystal plane, and the depositingof the III-Nitride layers further comprises: depositing one or moren-type (Al,In,Ga)N layers on the semi-polar crystal plane, depositing anInGaN active layer comprising one or more InGaN quantum well layers onor above the one or more n-type (Al,In,Ga)N layers, and depositing oneor more p-type (Al,In,Ga)N layers on the InGaN quantum well layers,wherein the n-type (Al,In,Ga)N layers, the p-type (Al,In,Ga)N layers,and the InGaN quantum well layers have a semi-polar orientation of thesemi-polar crystal plane, and the InGaN quantum well layers have a peaklight emission or a peak light absorption at a wavelength of at least477 nm.
 22. The method of claim 14, wherein the optoelectronic device isa laser diode, the depositing of the III-Nitride layers furthercomprising: depositing an n-type GaN layer on or above the semi-polarcrystal plane; depositing an n-type InGaN waveguiding layer on or abovethe n-type GaN layer, the n-type InGaN waveguiding layer having athickness of at least 50 nm and an Indium composition of 7% or more;depositing an InGaN active layer on or above the n-type InGaNwaveguiding layer, including one or more InGaN quantum well layers withan Indium composition of at least 7% and a thickness of more than 4 nm;depositing a p-type InGaN waveguiding layer on or above the InGaNquantum wells; and depositing a a p-type GaN layer on or above thep-type InGaN waveguiding layer, the p-type InGaN waveguiding layerhaving a thickness of at least 50 nm and an Indium composition of 7% ormore, wherein the III-Nitride layers have a semi-polar orientation ofthe semi-polar crystal plane.
 23. The method of claim 14, wherein thesemi-polar crystal plane comprises an atomically specific plane, so thata smooth epitaxial growth of the III-Nitride layers is achieved.
 24. Themethod of claim 14, wherein the optoelectronic device deposited on thesemi-polar GaN crystal plane includes a laser diode, light emittingdiode, superluminescent diode, semiconductor amplifier, photonic crystallaser, VCSEL laser, solar cell, or photodetector.
 25. The method ofclaim 14, wherein the optoelectronic device is a laser diode grown onthe semi-polar crystal plane, and the laser diode comprises a waveguideoriented in a c-projection direction of the laser diode, for highergain.
 26. The method of claim 14, further comprising: selecting thesemi-polar crystal plane in order to increase a critical thickness ofthe III-Nitride layers grown on the semi-polar crystal plane.
 27. Themethod of claim 14, wherein the semi-polar crystal plane and thedepositing conditions are such that one or more of the III-Nitridelayers have a surface roughness of 0.75 nm or less.